| Previous Achievements and Awards | 
|
| Previous Achievements and Awards |
|
Previous Achievements
of Partners in the NanOp Competence Center
High volume production of visible LED's for various applications, production of vertical cavity surface emitting laser diodes (VCSEL's), DFB lasers, high power lasers, photodetectors, and other devices (Infineon)
Leading manufacturer of optoelectronic systems like datacom links (Infineon)
Leading manufacturer of MOVPE equipment (AIXTRON)
Special, high quality, improved safety MO precursors (SGS MOCHEM)
First demonstration of room temperature low threshold quantum dot laser (TU Berlin/Ioffe Institute)
Development of proprietary technologies for growth of InAs quantum dots on GaAs and GaN on Si by means of MOVPE (TU Berlin)
World record low threshold quantum dot VCSEL (TU Berlin/Ioffe Inst.)
Demonstration of state-of-the-art VCSEL's and VCSEL arrays with record high output power and conversion efficiency (U Ulm), first 10 Gbit/s optical data transmission systems with VCSEL's (U Ulm)
Realization of optical heterodyne receiver chip on InP hitherto representing the most complex photonic monolithically integrated opto-chip worldwide (HHI), and first demonstration of 60 Gbit/s integrated photoreceiver on InP (HHI, TU Berlin), realization of transceiver chips on InP (HHI)
Fabrication of vertically shaped micro-optical components (waveguide tapers, micro-lenses) using nano-structured, semi-transparent mask lithography (HHI)
Al-free lasers in broad area devices (7 W) and in laser bars (70 W), temperature-stable laser diodes, high reliability exceeding 105 hours (FBH)
Pioneering photon storage in surface acoustic wave devices (LMU Munich)
Wafer bonding (Si,GaAs,sapphire) using low temperature processing (MPI Halle)
MSM photodetectors and lasers for the 1.5 µm-wavelength range on InP or Si (TU Berlin and TU Braunschweig)
Nano-crystalline silicon films prepared by laser crystallization (IPHT)
First observation of 100K strong emission from deep etched Si-SiGe quantum dots and efficient room temperature electroluminescence (U Wuppertal)
First demonstration of efficient luminescence from and structure of InAs quantum dots in Si (Ioffe Inst./TU Berlin/MPI-MSP Halle)
First red light emission from InP quantum dot laser (MPI-FKF Stuttgart with U Stuttgart)
First realization of AlGaInP DFB- and DBR- lasers for 670 nm and 630 nm and wave-length tuneable DFB lasers at 670 nm. Also first realisation of a DFB-MOPA at 670 nm for high power (Watt-range), demonstration of optically pumped CC-DFB laser (U Stuttgart)
First realization of dot- and wire-DFB lasers in the InGaAsP/InP-material system (U Stuttgart)
Determination of facet temperature, and thermal device management (MBI)
First report of 1.4 µm and 2 µm efficient luminescence from InGaAs quantum dots on GaAs and InP, respectively (Ioffe Inst./TU Berlin)
InGaSb/AlGaSb VCSEL's for 1.5-2 µm wavelength (U Würzburg)
Record low threshold gain coupled lasers at 1 µm and 1.5 µm (U Würzburg)
First realization of complex photonic bandgap structures (U Würzburg, MPI-MSP Halle)
First commercial mid infrared PbSe based lasers for gas analysis (Laser Components)
Atomic scale structural and chemical analysis of ternary semiconductors on the basis of high-resolution TEM images (MPI-MSP Halle, U Karlsruhe, HU Berlin)
Major Awards:
18. Innovationspreis der deutschen Wirtschaft 1998 (LDT)
Gerhard-Hess-Preis of DFG 1998 (Grundmann, TU Berlin)
Walter Schottky-Preis 1998 of DPG (Wixforth, LMU Munich)
Heinz Maier-Leibnitz-Preis of BMBF and DFG 1998 (Grundmann, TU Berlin)
1. Deutscher Zukunftspreis 1997 of the President of the FR Germany (Deter, LDT)
Gottfried Wilhelm Leibniz-Preis 1997 (Ebeling, U Ulm)
Highlight in Optics 1997 of OSA (Wixforth, LMU Munich)
Karl Heinz Beckurts-Preis 1997 (BMBF) (Ebeling, U Ulm)
Carl Ramsauer-Preis 1997 (TEMIC/Daimler Benz) (Kirstaedter, TU Berlin)
Max-Planck-Forschungspreis 1996 (Kotthaus, LMU Munich)
Karl Heinz Beckurts-Preis 1995 (BMBF) (Stolz, Greiling, SGS Mochem)