Members of NanOp

TECHNISCHE UNIVERSITÄT BRAUNSCHWEIG, Braunschweig Institut für Halbleitertechnik, Prof. Dr. A. Schlachetzki

The work of the institute is strictly device-oriented. All facilities for this purpose are available in clean rooms, namely an MOVPE for III/V-semiconductor crystal growth, a complete line of optical lithography and equipment for characterization of material and devices.

The past and present work of the group focuses on several aspects of the realisation of integrated microsystems. In particular the following devices were studied or fabricated in monolithic integration:

• InGaAs MSM-photodetectors
• on InP integrated with transferred-electron device (TED) preamplifier in the GHz range
• on InP integrated with micromechanical structures for passive alignment with polymeric waveguide up to 4 GHz
• on Si with comparable properties integrated with Si-MOS-preamplifier
• InGaAsP optical transmitters
• 1.3 µm mushroom-type laser integrated with TED driver for 2 to 10 Gbit/s
• 1.5 µm LED on Si with integrated Si-MOS-driver
• 1.5 µm quantum wire structure in etched InP V-groove for singly addressable lasers including simulation of wet-chemical etching and epitaxial growth
• Micromechanical sensors
• Resonant vibration sensor integrated with Si-MOS-amplifier, 3D inertial sensor, examination of the piezoelectric effect of InP and other III/V-semiconductors on Si for actuator applications.