| Members of NanOp | ![]() |
| Institute
of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences (ISP SB RAS), Novosibirsk (Russia) Prof. Alexander L.Aseev |
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Institute of Semiconductor Physics was founded in 1964 originating from integration of the Institute of Radiophysics and Electronics and the Institute of Solid State Physics and Semiconductor Electronics, Siberian Branch, USSR Academy of Sciences.
By now, the Institute of Semiconductor Physics has become one of the leading
Russian scientific centers in the field of fundamental and applied research
on semiconductor Physics, solid state physics, micro- and nanoelectronics. At
present, the total staff of the Institute numbers 760 people and among them:
245 scientists, 5 corresponding members of RAS. The Institute occupies a total
area of 35.735 square metres and is housed in 3 buildings including a unique
thermostatic one instrumented with equipment
or advanced production processes and investigation of semiconductor structures
of micro-, microphoto- and nanoelectronics. "