Members of NanOp

UNIVERSITÄT STUTTGART, Stuttgart 4. Physikalisches Institut Prof. Dr. M. Pilkuhn, PD Dr. H. Schweizer

Research at the University of Stuttgart is concentrated on the fabrication and investigation of optoelectronic devices with quantum wells, wires or dot structures as active region. The nano fabrication techniques are based on MOVPE epitaxy and lateral structuring using dry etching and ion implantation in conjunction with high resolution e-beam lithography. The group has a long-standing experience in realization of FP-and DFB-lasers in the infrared and visible emission range as well as in the realization of nanometer semiconductor structures for optical and electrical investigations. A clean room laboratory is available equipped with ion-implanter (400 keV), e-beam lithography (8 nm), dry etching facilities (ECR-RIE, RIBE, ECR-CAIBE) and SEM, AFM, STM and SIMS for characterization. The epitaxial laboratory is equipped with four MOVPE reactors.

Major achievements
The group has demonstrated first wire- and dot- DFB lasers in the InGaAsP material system in conjunction with detailed analysis of their dynamical properties. Results on quantum dot lasers in the red emission range on the basis of self assembled dots were obtained together with the MPI Stuttgart (Dr. Eberl). First DFB- and tunable DFB-lasers as well as master oscillator power amplifiers (MOPA) have been achieved in the AlGaInP material system. In the AlGaInP material system output powers around 1W could be demonstrated. InGaN MQWs of high quality and first optically pumped InGaN/GaN-DFB lasers with epitaxially embedded gratings have been obtained.

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