Members of NanOp

TECHNISCHE UNIVERSITÄT BERLIN, Berlin Institut für Festkörperphysik Prof. Dr. D. Bimberg

The group focuses on the growth, structural, optical and electrical characterization of III-V and II-VI semi-conductor nanostructures and III-V compounds in Si, and on the development and fabrication of high frequency optoelectronic devices, including laser and MSM-OEIC modeling. The devices are used in optical communication systems, for environmental monitoring and for medical applications. Facilities include clean room processing, two MOVPE machines and several laboratories for optical spectroscopy from the blue to the far infrared spectral range, and electrical and optical (on wafer) device characterization beyond 100 GHz.
Since the beginning of the 90's the potential offered by zero- and one-dimensional nanostructures is thoroughly explored. In particu-lar, we fabricate quantum dots using MOVPE. Their application for optoelectronic devices was pioneered. The first Fabry-Perot lasers based on self-organized quantum dots (QDs) were presented in 1994 by us in coope-ration with the A.F. Ioffe Institute, St. Petersburg (Prof. Alferov, affiliated foreign partner, see page Q). This was the beginning of an ongoing close partnership. These devices had already superior temperature characteristics than any previous laser at that wave-length. Since that time the device per-formance has been further dramatically improved to a point where selected device para-meters are superior to current quantum well based technology. With the new possibilities for band gap engineering using QD's 1.3 µm wavelength and probably 1.55 µm can be covered by GaAs based devices. Several patents for the MOVPE processes developed by the institute are submitted.