| Members
of NanOp |
 |
Research of the
semiconductor device technology group at the Department focuses on quantum structure
edge emitting and vertical cavity surface emitting laser diodes. Solid and gas
source molecular beam epitaxy are employed for layer growth and novel selective
oxidation techniques are preferably applied for lateral patterning with dimensions
in the nanometer regime. The group is world-wide leading in the field of high
performance and high power vertical cavity laser diodes and arrays. It was the
first to employ extremely thin (~10 nm) oxide layers for lateral current and
optical confinement in laser diodes and to demonstrate novel diode cascade quantum
well vertical cavity laser diodes. The group intensively collaborates with industry
(e.g. Daimler-Benz, Siemens, several medium size companies) and research
institutes (e.g. IAF Freiburg, FBH Berlin) via BMBF and EU projects and bilateral
contracts.
