| Members
of NanOp |
 |
The research group
"Semiconductor Technology" at the Walter-Schottky-Institute (WSI) of the Technical
University of Munich is active in the fields of III-V compound semiconductor
technology, electronic and optoelectronic devices. Molecular beam epitaxy with
solid sources (MBE) and gas sources (CBE) is the basis for the controlled and
reproducible growth of heterostructures on GaAs and InP and lateral dimensions
in the nanometer range have been obtained by e-beam lithography. Particular
device work focuses on the development of 980 nm laser diodes with vertical
cavities (VCSEL's) and on integratable laser diodes in the 1.55 µm wavelength
range. Both types of laser diodes have been fabricated with strained and unstrained
quantum well active regions to achieve optimum device performance. Most research
work has been performed in cooperation with various industrial (Siemens, Bosch)
and university groups as well as with research institute such as the HHI and
the IAF.
